Semiconductor device
摘要
說明書
One embodiment of the present invention is a semiconductor device including a mixer circuit including a digital-analog converter circuit, a control circuit for controlling the digital-analog converter circuit, a power source control switch, and a plurality of Gilbert circuits; the plurality of Gilbert circuits each include an analog potential holding circuit for holding an analog potential output from the digital-analog converter circuit; the control circuit has a function of outputting a signal for controlling the analog potential holding circuit and the digital-analog converter circuit; the power source control switch has a function of stopping supply of a power source voltage to the control circuit in a period during which the analog potential held in the analog potential holding circuit is not updated; the analog potential holding circuit includes a first transistor; and the first transistor includes a semiconductor layer including an oxide semiconductor in a channel formation region.
In the semiconductor device of one embodiment of the present invention, preferably, the Gilbert circuits each include a second transistor and the second transistor includes a semiconductor layer including silicon in a channel formation region.
In the semiconductor device of one embodiment of the present invention, preferably, the first transistor is provided to overlap with a layer in which the second transistor is provided.
In the semiconductor device of one embodiment of the present invention, preferably, an adder circuit and an amplifier circuit are included; the adder circuit has a function of adding signals output from the plurality of Gilbert circuits; and the amplifier circuit has a function of amplifying and outputting signals output from the adder circuit.
