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Semiconductor device

專利號
US11888446B2
公開日期
2024-01-30
申請人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.（JP Atsugi）
發(fā)明人
Kiyotaka Kimura; Takeya Hirose; Hidetomo Kobayashi; Takayuki Ikeda
IPC分類
H03D7/14; H03D7/12; H01L27/12; H01L29/786; H10B12/00
技術(shù)領(lǐng)域
insulator,conductor,transistor,oxide,circuit,in,analog,530b,or,530c
地域： Atsugi

摘要

A semiconductor device with a novel structure is provided. The semiconductor device includes a mixer circuit including a digital-analog converter circuit, a control circuit for controlling the digital-analog converter circuit, a power source control switch, and a plurality of Gilbert circuits. The plurality of Gilbert circuits each include an analog potential holding circuit for holding an analog potential output from the digital-analog converter circuit. The control circuit has a function of outputting a signal for controlling the analog potential holding circuit and the digital-analog converter circuit. The power source control switch has a function of stopping supply of a power source voltage to the control circuit in a period during which the analog potential held in the analog potential holding circuit is not updated. The analog potential holding circuit includes a first transistor. The first transistor includes a semiconductor layer including an oxide semiconductor in a channel formation region.

說明書

Note that the insulator 550 may have a stacked-layer structure like the second gate insulating film. As miniaturization and high integration of transistors progress, a problem such as leakage current might arise because of a thinner gate insulating film. For that reason, when the insulator functioning as the gate insulating film has a stacked-layer structure of a high-k material and a thermally stable material, a gate potential during transistor operation can be reduced while the physical thickness is maintained. Furthermore, the stacked-layer structure can be thermally stable and have a high relative permittivity.

Although the conductor 560 functioning as the first gate electrode has a two-layer structure in FIG. 10A and FIG. 10B, the conductor 560 may have a single-layer structure or a stacked-layer structure of three or more layers.

權(quán)利要求

1
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