Semiconductor device
地域：
Atsugi
摘要
A semiconductor device with a novel structure is provided. The semiconductor device includes a mixer circuit including a digital-analog converter circuit, a control circuit for controlling the digital-analog converter circuit, a power source control switch, and a plurality of Gilbert circuits. The plurality of Gilbert circuits each include an analog potential holding circuit for holding an analog potential output from the digital-analog converter circuit. The control circuit has a function of outputting a signal for controlling the analog potential holding circuit and the digital-analog converter circuit. The power source control switch has a function of stopping supply of a power source voltage to the control circuit in a period during which the analog potential held in the analog potential holding circuit is not updated. The analog potential holding circuit includes a first transistor. The first transistor includes a semiconductor layer including an oxide semiconductor in a channel formation region.
說明書
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In this specification and the like, channel width refers to, for example, the length of a portion where a source and a drain face each other in a region where a semiconductor (or a portion where current flows in a semiconductor when a transistor is in an on state) and a gate electrode overlap with each other or a region where a channel is formed.
Note that in this specification and the like, the terms such as “film” and “l(fā)ayer” can be interchanged with each other depending on the case or according to circumstances. For example, the term “conductive layer” can be changed into the term “conductive film” in some cases. For another example, the term “insulating film” can be changed into the term “insulating layer” in some cases.
意見反饋