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Apparatus, memory device and method for storing parameter codes for asymmetric on-die-termination

專利號
US11888476B2
公開日期
2024-01-30
申請人
SAMSUNG ELECTRONICS CO., LTD.(KR Suwon-si)
發(fā)明人
Daehyun Kwon; Hyejung Kwon; Hyeran Kim; Chisung Oh
IPC分類
H03K19/017; H03K19/00; H03K19/17736; H03K19/17772
技術(shù)領(lǐng)域
odt,pull,circuit,signal,device,may,dq,second,line,data
地域: Suwon-si

摘要

An apparatus, a memory device, and a method for storing parameter codes with respect to asymmetric on-die-termination (ODT) are provided. The apparatus is connected to an external device via a signal line, and includes: an on-die termination (ODT) circuit set in a first ODT state; a plurality of signal pins, each of which is connected to the signal line; and an ODT control circuit configured to: identify whether a second ODT state of the external device corresponds to the first ODT state, and based on the apparatus being an asymmetric ODT in which the first ODT state and the second ODT state are different, provide an asymmetric ODT parameter code to the external device, and disable the ODT circuit when a signal is not transmitted through the signal line.

說明書

The second device 120 may include the ODT circuit 124b connected to the signal line 130, and the ODT circuit 124b may be configured as a pull-up circuit connected to the power voltage line VDDQ. The ODT circuit 124b may include the pull-up resistor RU connected between the power voltage VDDQ line and the signal line 130 and the pull-up switch SU disposed in correspondence to the pull-up resistor RU. The pull-up switch SU may be turned on or off according to a second ODT control signal C2b. The second ODT control signal C2b may be generated by the control circuit 122. When the pull-up switch SU is turned on by the second ODT control signal C2b, the ODT circuit 124b may be ODT enabled. When the pull-up switch SU is turned off, the ODT circuit 124b may be ODT disabled.

The ODT circuit 114b of the first device 110 is configured as the pull-down circuit connected to the ground voltage VSSQ, whereas the ODT circuit 124b of the second device 120 is configured as the pull-up circuit, and thus the first device 110 may confirm that the signal line 130 is in an asymmetric ODT state through an ODT state check operation.

FIG. 6 shows a state in which when a signal is not transmitted through the signal line 130, the pull-down switch SD and the pull-up switch SU are turned off so that the ODT circuits 114b and 124b of the first and second devices 110 and 120 are disabled. Accordingly, during a signal non-transmission, the signal line 130 may maintain a high-impedance state.

權(quán)利要求

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