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Apparatus, memory device and method for storing parameter codes for asymmetric on-die-termination

專利號
US11888476B2
公開日期
2024-01-30
申請人
SAMSUNG ELECTRONICS CO., LTD.(KR Suwon-si)
發(fā)明人
Daehyun Kwon; Hyejung Kwon; Hyeran Kim; Chisung Oh
IPC分類
H03K19/017; H03K19/00; H03K19/17736; H03K19/17772
技術領域
odt,pull,circuit,signal,device,may,dq,second,line,data
地域: Suwon-si

摘要

An apparatus, a memory device, and a method for storing parameter codes with respect to asymmetric on-die-termination (ODT) are provided. The apparatus is connected to an external device via a signal line, and includes: an on-die termination (ODT) circuit set in a first ODT state; a plurality of signal pins, each of which is connected to the signal line; and an ODT control circuit configured to: identify whether a second ODT state of the external device corresponds to the first ODT state, and based on the apparatus being an asymmetric ODT in which the first ODT state and the second ODT state are different, provide an asymmetric ODT parameter code to the external device, and disable the ODT circuit when a signal is not transmitted through the signal line.

說明書

The transmitter 824 of the second device 120 may include a pull-up circuit 824U and a pull-down circuit 824D coupled to the data line 830 and the second pin 820. The pull-up circuit 824U may include a plurality of PMOS transistors UP1 to UPn connected to the power voltage VDDQ line and the data line 830, and arranged in parallel. Each of the PMOS transistors UP1 to UPn may be turned on or off according to a second pull-up drive code PU2[n:1] corresponding thereto. The PMOS transistors UP1 to UPn corresponding to a bit value “0” of the second pull-up drive code PU2[n:1] are turned on so that the data line 830 may be driven at a logic high level. As additional transistors of the PMOS transistors UP1 to UPn are turned on, the driving capability of the pull-up circuit 824U may be increased.

The pull-down circuit 824D may include a plurality of NMOS transistors DN1 to DNn connected between the data line 830 and the ground voltage VSSQ line, and arranged in parallel. Each of the NMOS transistors DN1 to DNn may be turned on or off according to a second pull-down drive code PD2[n:1] corresponding thereto. The NMOS transistors DN1 to DNn corresponding to a bit value “1” of the second pull-down drive code PD2 [n:1] are turned on so that the data line 830 may be driven at a logic low level. As additional transistors of the NMOS transistors DN1 to DNn are turned on, the driving capability of the pull-down circuit 824D may be increased.

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