白丝美女被狂躁免费视频网站,500av导航大全精品,yw.193.cnc爆乳尤物未满,97se亚洲综合色区,аⅴ天堂中文在线网官网

Manufacturing method of an organic light emitting diode display device including an etch stop layer

專利號
US11889730B2
公開日期
2024-01-30
申請人
SAMSUNG DISPLAY CO., LTD.（KR Yongin-si）
發(fā)明人
Kyeong Su Ko; Joon Yong Park; Gyung Min Baek; Hyun Min Cho; Dae Won Choi
IPC分類
H10K59/13; H10K59/131; H10K50/81; H10K50/82; H10K71/00; H10K59/12; H10K102/10
技術(shù)領(lǐng)域
layer,etch,electrode,pixel,stop,partition,organic,etching,emitting,upper
地域： Yongin-si

摘要

An organic light emitting diode display including: a substrate; a TFT on the substrate; a planarization layer on the TFT; a pixel electrode on the planarization layer, wherein the pixel electrode includes upper and lower layers including a transparent conductive oxide and an intermediate layer including silver; an etch stop layer on the pixel electrode, wherein an upper surface of the pixel electrode is exposed by the etch stop layer; a partition on the etch stop layer, wherein the upper surface of the pixel electrode is exposed by the partition; an organic emission layer on the upper surface of the pixel electrode where the upper surface of the pixel electrode is exposed by the etch stop layer and the partition; and a common electrode on the organic emission layer and the partition, wherein the etch stop layer covers an edge and a side surface of the pixel electrode.

說明書

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No. 16/894,953 filed on Jun. 8, 2020, now U.S. Pat. No. 11,342,404, which claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2019-0101063 filed in the Korean Intellectual Property Office on Aug. 19, 2019, the disclosures of which are incorporated by reference herein in their entireties.

(a) TECHNICAL FIELD

The present invention relates to an organic light emitting diode display and a manufacturing method thereof, and more particularly to an organic light emitting diode display including a partition made of an inorganic material and a manufacturing method thereof.

(b) DESCRIPTION OF THE RELATED ART

An organic light emitting diode (OLED) display works without a backlight because it emits visible light. Thus, it can display deep black levels and can be thinner and lighter than a liquid crystal display (LCD) device. Further, the OLED display has high quality characteristics such as low power consumption, high luminance, high response speed, and the like.

In an OLED display, a pixel may include a thin film transistor and an OLED, the thin film transistor may be protected by a planarization layer, and the OLED may be partitioned by a partition. Typically, the planarization layer and the partition are made of an organic material such as a polyimide or a polyamide.

However, when the organic material is exposed to sunlight for a long time, the organic material generates gases such as carbon or oxygen, thereby deteriorating the OLED.

SUMMARY

權(quán)利要求

1
What is claimed is:1. A manufacturing method of an organic light emitting diode display, the method comprising:receiving a substrate on which a planarization layer is disposed on a thin film transistor;forming a pixel electrode material layer including an upper material layer, an intermediate material layer including silver, and a lower material layer on the planarization layer;forming an etch stop material layer including a compound having low reactivity with a fluorine-based gas on the upper material layer;forming an etch stop layer by first patterning the etch stop material layer;forming a pixel electrode including an upper layer, an immediate layer, and a lower layer by patterning the pixel electrode material layer;forming an inorganic material layer for a partition on the etch stop layer;forming the partition to expose an upper surface of the etch stop layer by patterning the inorganic material layer for the partition;forming the etch stop layer to expose the upper surface of the pixel electrode by second patterning the etch stop layer;forming an organic emission layer on an exposed portion of the upper surface of the pixel electrode; andforming a common electrode on the organic emission layer and the partition.2. The manufacturing method of claim 1, whereinthe upper layer and the lower layer of the pixel electrode include a poly-indium tin oxide or an indium tin oxide.3. The manufacturing method of claim 1, whereinthe forming of the partition is performed by dry etching.4. The manufacturing method of claim 3, whereinthe etch stop layer is formed at an edge of the pixel electrode.5. The manufacturing method of claim 1, whereinthe forming the etch stop layer is performed by wet etching.6. The manufacturing method of claim 5, whereinthe etch stop layer includes a material having a higher etching ratio than that of the pixel electrode.
微信群二維碼
意見反饋