FIG. 9 illustrates a schematic cross-sectional view of an organic light emitting diode display according to another exemplary embodiment of the present invention.

Referring to FIG. 9, the organic light emitting diode display according to the present exemplary embodiment may include a substrate 100, a buffer layer 110, a semiconductor layer 121, a gate insulating layer 130, a gate electrode 140, an interlayer insulating layer 150, a source electrode 161, a drain electrode 162, a planarization layer 180, a pixel electrode 190, an etch stop layer 210, an organic emission layer 350, a partition 370, and a common electrode 270. Herein, the pixel electrode 190, the organic emission layer 350, and the common electrode 270 compose an OLED.

The display device illustrated in FIG. 9 is similar in structure to most of the display device illustrated in FIG. 1. For example, the display device of FIG. 9 differs from that of FIG. 1 in the formation position of the etch stop layer 210, and thus, the following description will focus on the etch stop layer 210.

The etch stop layer 210 is disposed at an edge of the pixel electrode 190 except for the exposed portion of the upper surface of the pixel electrode 190. In other words, an end of the pixel electrode 190 and an end of the etch stop layer 210 may be positioned on a same surface. The etch stop layer 210 may have a thickness of about 400 ? to 800 ?.