Secondly, with the non-metal conductive layer 300 serving as an etching stop layer, the insulation layer 500 is used as the mask to etch the metal barrier material layer 410 to transfer the second graphical target pattern to the metal barrier material layer 410; in this embodiment, silicon nitride is used to manufacture the metal barrier material layer 410.

Then, the insulation layer 500 is used as the mask to etch the non-metal conductive layer 300 to transfer the second graphical target pattern to the non-metal conductive layer 300. In this embodiment, the polycrystalline silicon material is used to form the non-metal conductive layer 300, and chlorine is used to etch the non-metal conductive layer 300. Since it is easier for micromolecular chlorine to enter the bitline contact hole 200, the duration of etching the non-metal conductive layer 300 may be shortened, ensuring that the etched non-metal conductive layer 300 has a good shape and a large width. The non-metal conductive layer 300 is of a cross-section shape of trapezoid after being etched. The non-metal conductive layer 300 of this shape may provide a good support to the metal conductive layer and the insulation layer located above it, reducing a collapsing risk for the bitline structure 900.

An embodiment of the present application further provides a semiconductor structure formed using the manufacturing method according to any of the embodiments described above. With continued reference to FIG. 12, the semiconductor structure includes a substrate 100 and a bitline structure 900.

The substrate 100 has a plurality of bitline contact holes 200.