Writing data “0”: A positive voltage is applied from the first metal interconnection portion 601 (or the third metal interconnection portion 603) to the second metal interconnection portion 602 to vertically polarize the ferroelectric thin film layer 300. The applied positive voltage is removed, and a negative current flows from the first metal interconnection portion 601 to the third metal interconnection portion 603.

Based on the above-mentioned process of writing data “0” or “1”, it can be determined that the present disclosure can choose to apply a positive voltage or a negative voltage according to whether it is the data “1” or the data “0” is to be written, that is, the writing of SOT-MRAM is regulated by changing the positive or negative polarization of the voltage; and the present disclosure can also choose to apply a positive current or a negative current according to whether it is the data “1” or the data “0” is to be written, that is, the writing of SOT-MRAM is regulated by changing the direction of the current. Or it can be understood that the present disclosure can choose the positive or negative polarization of the applied voltage and change the direction of the current according to whether it is the data “1” or the data “0” is to be written.

Based on the same technical concept as the structure of the magnetic random access storage unit of the present disclosure, the present disclosure can also provide a data reading method for a magnetic random access storage unit. The data reading method may include, without limitation, the following at least one step. Regarding the structure of the product in FIG. 1 or FIG. 2, a repeated description will not be given herein.