A voltage is applied to the ferroelectric thin film layer 300, the bottom electrode 400, and the tunnel junction 500 that are disposed in sequence in the vertical direction to read data from the tunnel junction 500.

As shown in FIG. 1 or 2, the present disclosure can specifically apply a current between the first metal interconnection portion 601 and the fourth metal interconnection portion 604, so that the data currently stored in the magnetic random access storage unit (“0” or “1”) can be read.

It should be understood that the voltage, current and other parameters specifically used in one or more embodiments of the present disclosure can be set reasonably according to the actual requirements of sizes and materials of the semiconductor devices and the like, as long as the technical object of the solutions of the present disclosure can be realized, and a detailed description in this regard will be omitted herein.

The present disclosure can also provide a magnetic random access memory, which may include the magnetic random access storage unit in any embodiment of the present disclosure. The magnetic random access memory of the present disclosure is specifically a spin orbit torque-magnetic random access memory. The magnetic random access memory may include, for example, a plurality of storage arrays arranged in a matrix structure, in which each magnetic random access storage unit can be controlled by one or more transistors to complete data writing and reading of the magnetic random access storage unit.

The present disclosure can also provide an electronic device, which includes the magnetic random access memory or the magnetic random access storage unit in any embodiment of the present disclosure.