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Voltage control of SOT-MRAM for deterministic writing

專利號
US11930720B2
公開日期
2024-03-12
申請人
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES(CN Beijing)
發(fā)明人
Meiyin Yang; Jun Luo; Yan Cui; Jing Xu
IPC分類
G11C11/16; G11C11/18; G11C11/22; H10B61/00; H10N52/00; H10N52/80
技術(shù)領(lǐng)域
metal,layer,electrode,magnetic,tunnel,portion,disclosure,random,film,junction
地域: Beijing

摘要

The present disclosure provides a storage unit, a data writing method and a data reading method thereof, a memory and an electronic device. The storage unit includes a semiconductor substrate, a first insulating medium layer, a ferroelectric thin film layer, a bottom electrode, a tunnel junction, a first metal interconnection portion, a second metal interconnection portion, a third metal interconnection portion and a fourth metal interconnection portion. The first insulating medium layer is formed on the semiconductor substrate, the ferroelectric thin film layer is disposed on the first insulating medium layer, the bottom electrode is formed on the ferroelectric thin film layer, and the tunnel junction is formed on the bottom electrode. The first metal interconnection portion is connected to a first end of the bottom electrode, and the third metal interconnection portion is connected to a second end of the bottom electrode. The second metal interconnection portion is connected to the ferroelectric thin film layer, and the fourth metal interconnection portion is connected to the tunnel junction. As compared with the prior art, the present disclosure can control a directional flipping of the magnetic moment in the tunnel junction based on the ferroelectric thin film layer provided. Based on the structural design of the storage unit, the present disclosure does not require an external magnetic field, and fully meets the requirement of high integration of the device.

說明書

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It should be understood that the electronic devices involved in the present disclosure may include, without limitation, smart phones, computers, tablet computers, wearable smart devices, artificial intelligence devices, mobile power supplies, and the like.

In the above description, the technical details such as patterning and etching of each layer is not described in detail. However, it should be understood by those skilled in the art that various technical means can be used to form layers and regions of a desired shape, etc. In addition, in order to form the same structure, those skilled in the art can also design a method that is not completely the same as the method described above. In addition, although individual embodiments have been described above, this does not mean that the measures in the individual embodiments cannot be advantageously used in combination.

The embodiments of the present disclosure have been described above. However, these embodiments are for illustrative purposes only, and are not intended to limit the scope of the present disclosure. The scope of the present disclosure is defined by the appended claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art can make various substitutions and modifications, and these substitutions and modifications should fall within the scope of the present disclosure.

權(quán)利要求

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