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Voltage control of SOT-MRAM for deterministic writing

專利號(hào)
US11930720B2
公開日期
2024-03-12
申請(qǐng)人
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES（CN Beijing）
發(fā)明人
Meiyin Yang; Jun Luo; Yan Cui; Jing Xu
IPC分類
G11C11/16; G11C11/18; G11C11/22; H10B61/00; H10N52/00; H10N52/80
技術(shù)領(lǐng)域
metal,layer,electrode,magnetic,tunnel,portion,disclosure,random,film,junction
地域： Beijing

摘要

The present disclosure provides a storage unit, a data writing method and a data reading method thereof, a memory and an electronic device. The storage unit includes a semiconductor substrate, a first insulating medium layer, a ferroelectric thin film layer, a bottom electrode, a tunnel junction, a first metal interconnection portion, a second metal interconnection portion, a third metal interconnection portion and a fourth metal interconnection portion. The first insulating medium layer is formed on the semiconductor substrate, the ferroelectric thin film layer is disposed on the first insulating medium layer, the bottom electrode is formed on the ferroelectric thin film layer, and the tunnel junction is formed on the bottom electrode. The first metal interconnection portion is connected to a first end of the bottom electrode, and the third metal interconnection portion is connected to a second end of the bottom electrode. The second metal interconnection portion is connected to the ferroelectric thin film layer, and the fourth metal interconnection portion is connected to the tunnel junction. As compared with the prior art, the present disclosure can control a directional flipping of the magnetic moment in the tunnel junction based on the ferroelectric thin film layer provided. Based on the structural design of the storage unit, the present disclosure does not require an external magnetic field, and fully meets the requirement of high integration of the device.

說明書

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The ferroelectric thin film layer 300 can be, for example, PZT (plumbum zirconate titanate) or HrZrO. The present disclosure can be implemented in CMOS (complementary metal oxide semiconductor) process by thin film growing means such as PVD (physical vapor deposition), ALD (atomic layer deposition), etc. The ferroelectric thin film layer 300 may for example have a square shape or other shapes. The structure of the SOT tunnel junction can be grown on the ferroelectric thin film when processing the device of the present disclosure. In addition, the tunnel junction 500 can specifically include a fixed magnetic layer, a tunnel insulating layer, a free magnetic layer, an upper electrode layer, etc., which are stacked in sequence in a longitudinal direction, and a detail description thereof will be omitted in the present disclosure.

權(quán)利要求

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