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Three-dimensional memory

專利號
US11991887B2
公開日期
2024-05-21
申請人
Taiwan Semiconductor Manufacturing Company, Ltd.（TW Hsinchu）
發(fā)明人
Chenchen Jacob Wang; Chun-Chieh Lu; Yi-Ching Liu
IPC分類
H10B51/40; G11C11/22; G11C16/08; H01L23/522; H10B43/27; H10B43/40; H10B51/20; H10B43/10; H10B51/10
技術(shù)領(lǐng)域
bit,sub,memory,lv0,line,conductive,bl0_0,in,structure,lines
地域： Hsinchu

摘要

Three-dimensional memories are provided. A three-dimensional memory includes a memory cell array, a first interconnect structure, a bit line decoder and a second interconnect structure. The bit line decoder is formed under the memory cell array and the first interconnect structure. The memory cell array includes a plurality of memory cells formed in a plurality of levels stacked in a first direction. The first interconnect structure includes at least one bit line extending in a second direction that is perpendicular to the first direction. The bit line includes a plurality of sub-bit lines stacked in the first direction. Each of the sub-bit lines is coupled to the memory cells that are arranged in a line in the corresponding level of the memory cell array. The second interconnect structure is configured to connect the bit line to the bit line decoder passing through the first interconnect structure.

說明書

The interconnect structures 210c and 210d have the configuration similar to the interconnect structure 210 of FIG. 8. The conductive features 215 of the interconnect structure 210c and the interconnect structure 210d are formed in the same level. In the layout of the interconnect structures 210c and 210d, the conductive features 212 of the interconnect structures 210c and 210d are arranged in a line. Moreover, the conductive features 216 of the interconnect structure 210c are arranged in a first line, and the conductive features 216 of the interconnect structure 210d are arranged in a second line parallel with the first line. In some embodiments, a distance between the first and second lines is greater than the pitch width of the conductive features 212.

權(quán)利要求

1
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