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Electrochemical energy storage devices

專利號(hào)
US11996517B2
公開(kāi)日期
2024-05-28
申請(qǐng)人
Space Charge, LLC(US CO Aspen)
發(fā)明人
John B. Read; Daniel C. Sweeney
IPC分類
H01M10/0562; H01G11/02; H01G11/04; H01G11/20; H01G11/28; H01G11/46; H01G11/48; H01G11/70; H01M4/04; H01M4/131; H01M4/48; H01M4/525; H01M4/86; H01M10/0585; H01M8/12
技術(shù)領(lǐng)域
nm,electrode,energy,about,solid,may,storage,in,or,be
地域: CO CO Aspen

摘要

Integrated devices comprising integrated circuits and energy storage devices are described. Disclosed energy storage devices correspond to an all-solid-state construction, and do not include any gels, liquids, or other materials that are incompatible with microfabrication techniques. Disclosed energy storage device comprises energy storage cells with electrodes comprising metal-containing compositions, like metal oxides, metal nitrides, or metal hydrides, and a solid state electrolyte.

說(shuō)明書

Alternatively, the electrolyte layer may be largely evacuated, and the resulting cavity may be supported with minute spacers measuring between about 20 nm and about 100 nm, for example. In such instances, the cavity is optionally filled with gaseous oxygen (or hydrogen or nitrogen) at a pressure of about 0.1 bar, or about 0.2 bar or about 0.3 bar, or at fractional or intermediate values or ranges between these stated numbers.

In one embodiment, the gas may, for example, be ionized by a pair of lateral electrodes that impose a transient high voltage on the gas, such as a voltage that imparts an electric field of sufficient strength to ionize the gas.

N. Enhanced Ionic Conductivity Dependencies

Thin-film scale and temperatures. Invoking high ionic conductivity for purposes of fabricating energy storage devices via thin-film deposition of the solid-state electrolytes may involve two aspects. The first, thickness of the film, may dominate at all enhanced ionic conductivity temperatures. Temperature itself plays a significant role, especially at thicker (but still thin) films.

Enhanced ionic conductivity in the sense of orders of magnitude greater than bulk ionic conduction for the above mentioned solid-state electrolytes is exhibited below a particular thickness, which may vary from material to material. As an example, the enhancement for electrolytes in the zirconium family begins at below or about 700 nm. Thicker than that, bulk material characteristics dominate and the well-known Arrhenius formula apply. In smaller thickness electrolytes, the enhanced ionic migration is observed and embodiments described herein may make use of this advantageous property.

權(quán)利要求

1
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