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Electrochemical energy storage devices

專利號
US11996517B2
公開日期
2024-05-28
申請人
Space Charge, LLC(US CO Aspen)
發(fā)明人
John B. Read; Daniel C. Sweeney
IPC分類
H01M10/0562; H01G11/02; H01G11/04; H01G11/20; H01G11/28; H01G11/46; H01G11/48; H01G11/70; H01M4/04; H01M4/131; H01M4/48; H01M4/525; H01M4/86; H01M10/0585; H01M8/12
技術(shù)領(lǐng)域
nm,electrode,energy,about,solid,may,storage,in,or,be
地域: CO CO Aspen

摘要

Integrated devices comprising integrated circuits and energy storage devices are described. Disclosed energy storage devices correspond to an all-solid-state construction, and do not include any gels, liquids, or other materials that are incompatible with microfabrication techniques. Disclosed energy storage device comprises energy storage cells with electrodes comprising metal-containing compositions, like metal oxides, metal nitrides, or metal hydrides, and a solid state electrolyte.

說明書

In some embodiments, a solid electrolyte comprises or exhibits a structure, such as a crystal structure, including voids or defects, such as crystallographic defects, that permit conduction or migration of ions through the solid electrolyte at temperatures between about 0° C. and about 100° C. It will be appreciated that operation at temperatures between about 0° C. and about 50° C. is especially desirable, but the electrolytes may permit operation at temperatures above these temperatures, including above 100° C. In some embodiments, the solid electrolyte comprises or exhibits a structure including voids or defects that also permit conduction or migration of ions through the solid electrolyte at temperatures outside of the previously mentioned range, such as at temperatures less than about 0° C. or greater than about 100° C. As described above, it will be appreciated that this property may be contrasted with the same material of the solid electrolyte in the bulk, where voids and defects that are present in the bulk material may still not provide for suitable ionic conductivity, since the overall thickness of the material in bulk may provide an effect that reduces ionic conductivity. Optionally, the defects correspond to one or more vacancy defects, interstitial defects, boundary defects, line defects, planar defects, bulk defects, or lattice imperfections.

權(quán)利要求

1
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