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Electrochemical energy storage devices

專利號(hào)
US11996517B2
公開(kāi)日期
2024-05-28
申請(qǐng)人
Space Charge, LLC（US CO Aspen）
發(fā)明人
John B. Read; Daniel C. Sweeney
IPC分類
H01M10/0562; H01G11/02; H01G11/04; H01G11/20; H01G11/28; H01G11/46; H01G11/48; H01G11/70; H01M4/04; H01M4/131; H01M4/48; H01M4/525; H01M4/86; H01M10/0585; H01M8/12
技術(shù)領(lǐng)域
nm,electrode,energy,about,solid,may,storage,in,or,be
地域： CO CO Aspen

摘要

Integrated devices comprising integrated circuits and energy storage devices are described. Disclosed energy storage devices correspond to an all-solid-state construction, and do not include any gels, liquids, or other materials that are incompatible with microfabrication techniques. Disclosed energy storage device comprises energy storage cells with electrodes comprising metal-containing compositions, like metal oxides, metal nitrides, or metal hydrides, and a solid state electrolyte.

說(shuō)明書(shū)

FIG. 4 provides a schematic overview of processes taking place during charging and discharging of a solid-state energy storage device.

FIG. 5A and FIG. 5B provide overviews of processes for making solid-state energy storage devices.

FIG. 6 provides a schematic illustration of the crystal structure of a solid electrolyte, in accordance with some embodiments.

FIG. 7 provides a schematic illustration of the crystal structure of a solid electrolyte, in accordance with some embodiments.

FIG. 8 provides a schematic illustration of a system including energy storage devices distributed throughout an integrated circuit.

FIG. 9A, FIG. 9B, and FIG. 9C provide schematic illustrations of example energy storage devices.

FIG. 10A and FIG. 10B provide schematic cross-sectional illustrations of components of example energy storage devices.

FIG. 11 provides a schematic cross-sectional illustration of an integrated circuit including multilayer energy storage devices.

FIG. 12A and FIG. 12B provides schematic cross-sectional illustrations of an photovoltaic device including multilayer energy storage devices.

權(quán)利要求

1
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