Secondary battery electrode, and method for producing same
摘要
說(shuō)明書(shū)
The produced active material bulk may be cut using a method which is commonly used for cutting a semiconductor ingot which was conventionally used for producing a semiconductor wafer, such as wire saw and laser cutting, but the present invention is not limited by the specific cutting method of the active material bulk.
While the active material bulk is sliced, a cut width may be adjusted to easily adjust the thickness of the active material film and a single active material bulk is repeatedly cut, thereby mass-producing the active material films having substantially the same quality. Since the thickness of the active material film is controlled by the cut width of the active material bulk, there is no restriction on the thickness of the produced active material film, and an active material film in the form of a thick film having a thickness of 200 μm or more, which is difficult to produce by a slurry application technique, may be also easily produced. However, the present invention may not be defined by the thickness of the active material film, and the thickness of the active material film may be properly adjusted depending on the use of the active material secondary battery. As a specific example, the thickness of the active material film may range from an order of several tens of micrometers to an order several millimeters, and more specifically, may be 10 μm to 500 μm, but is not limited thereto.
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