The respective power module is based on power semiconductors with which a bridge circuit assembly is preferably formed. The bridge circuit assembly can comprise one or more bridge circuits in the form of half bridges. Each half bridge comprises a high side switch (HSS) and a low side switch (LSS) connected in series to the high side switch. Each half bridge is assigned to one current phase of a multiphase alternating current (output current).

The HSS and/or LSS comprise one or more power semiconductor components, e.g. IGBTs, MOSFETs or HEMTs. The semiconductor material forming the basis for the HSS or LSS preferably comprises a so-called wide-bandgap semiconductor (semiconductor with a wide bandgap) such as SiC or GaN.

The bridge circuit is attached to the interconnect device. The interconnect device has a first section for activating the drive (for adjusting the gate voltages in the half bridges), and a second section for control. The second section extends at an angle to the first section. Both sections are preferably connected to one another by a flexible third section. The first and second sections of the interconnect device preferably comprise a printed circuit board (PCB) and preferably form a combined control and driver board (CCDB). Alternatively, the first and/or second section can have a different type of interconnect device (with an additional ceramic substrate).

The first sections and the second sections of the interconnect devices can each form an independent interconnect device. In this case, this is an interconnect device assembly that comprises a first interconnect device and a second interconnect device.