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Power device assemblies and methods of fabricating the same

專利號(hào)
US11997838B2
公開日期
2024-05-28
申請人
Toyota Motor Engineering & Manufacturing North America Inc.（US TX Plano）
發(fā)明人
Feng Zhou; Yanghe Liu; Hiroshi Ukegawa
IPC分類
H05K7/20; H01L23/367
技術(shù)領(lǐng)域
power,assembly,graphite,sink,device,manifold,heat,coolant,cavity,assemblies
地域： TX TX Plano

摘要

Disclosed herein are apparatus and methods for a power electronics assembly that includes a cold plate assembly and one or more power device assemblies. The cold plate assembly has a manifold having a heat sink cavity in a first surface and a heat sink that includes one or more substrate cavities. The heat sink is positioned in the heat sink cavity. The one or more power device assemblies are positioned within the one or more substrate cavities. Each power device assembly includes an S-cell, a power device, and a direct bonded metal substrate bonded to the S-Cell. The S-cell includes a base layer constructed at least of graphite or a graphite-composite, a conductive layer at least partially surrounding the base layer, and a power device cavity. The power device is positioned in the power device cavity and is electrically coupled to the conductive layer.

說明書

TECHNICAL FIELD

The present specification generally relates to apparatus and methods for power electronic assemblies and, more specifically, apparatus and methods for power electronic assemblies having enhanced heat spreading and improved assembly alignment.

BACKGROUND

Due to the increased use of electronics in vehicles, there is a need to make electronic systems more compact. One component of these electronic systems is a power electronic device used as a switch in an inverter. Power electronic devices have large cooling requirements due to the heat generated. For these reasons, and more, there is a need to improve the cooling of power electronic devices and the assembly alignment of the power electronics devices while maintaining a compact package size.

SUMMARY

In one embodiment, an apparatus for a power electronics assembly includes a cold plate assembly and one or more power device assemblies. The cold plate assembly has a manifold and a heat sink. The manifold has a heat sink cavity in a first surface. The heat sink includes one or more substrate cavities. The heat sink is positioned in the heat sink cavity. The one or more power device assemblies are positioned within the one or more substrate cavities. Each power device assembly of the one or more power device assemblies includes an S-cell, a power device, and a direct bonded metal (DBM) substrate bonded to the S-Cell. The S-cell includes a base layer constructed at least of graphite or a graphite-composite, a conductive layer at least partially surrounding the base layer, and a power device cavity. The power device is positioned in the power device cavity and is electrically coupled to the conductive layer.

權(quán)利要求

1
What is claimed:1. A power electronics assembly comprising:a cold plate assembly comprising:a manifold comprising a heat sink cavity in a first surface; anda heat sink comprising one or more substrate cavities, wherein the heat sink is disposed in the heat sink cavity; andone or more power device assemblies disposed within the one or more substrate cavities, each power device assembly of the one or more power device assemblies comprising:an S-cell comprising:a base layer constructed at least of graphite or a graphite-composite,a conductive layer at least partially surrounding the base layer; anda power device cavity;a power device disposed in the power device cavity, the power device being electrically coupled to the conductive layer; anda direct bonded metal (DBM) substrate bonded to the S-Cell.2. The power electronics assembly of claim 1, further comprising a conductive coating disposed at least partially between the power device cavity and the power device, the conductive coating defining a coating height, wherein:each of the one or more substrate cavities defines a substrate cavity depth,the power device defines a power device height, andthe substrate cavity depth is substantially equal in value to the power device height with the conductive coating.3. The power electronics assembly of claim 1, further comprising a bonding layer disposed at least partially between the power device cavity and the power device, the bonding layer defining a bonding height, wherein:each of the one or more substrate cavities defines a substrate cavity depth,the power device defines a power device height, andthe substrate cavity depth is substantially equal in value to the power device height with the bonding layer.4. The power electronics assembly of claim 1, wherein the DBM substrate is constructed of an electrically insulating material.5. The power electronics assembly of claim 1, wherein the power device cavity is shaped and sized to receive the power device.6. The power electronics assembly of claim 1, wherein a top surface of the S-cell is substantially on a same plane as a top surface of the power device.7. The power electronics assembly of claim 1, wherein:the first surface is substantially on a same plane as a top surface of the power device,the S-cell and the power device define a channel extending around a perimeter of the power device;the cold plate assembly is configured for the channel to be printed upon until a top surface of the channel is on the same plane as the first surface; andthe cold plate assembly is configured for a printed circuit board to be printed upon the first surface.8. The power electronics assembly of claim 7, wherein material printed upon the channel is constructed of a dielectric material.9. The power electronics assembly of claim 1, further comprising:an inlet of the manifold configured to receive a coolant;an outlet of the manifold configured to provide the coolant, the outlet being fluidly coupled to the inlet; anda plurality of flow distributors disposed between the inlet and the outlet, the plurality of flow distributors further disposed fluidly downstream of the inlet, the plurality of flow distributors being configured to distribute flow of the coolant downstream of the inlet.10. A power device assembly comprising:an S-cell comprising a base layer constructed at least of graphite or a graphite-composite, a conductive layer at least partially surrounding the base layer, and one or more power device cavities;one or more power devices each disposed in one of the one or more power device cavities, each of the one or more power devices being electrically coupled to the conductive layer; anda direct bonded metal (DBM) substrate bonded to the S-cell.11. The power device assembly of claim 10, further comprising a first surface of a heat sink, wherein the DBM substrate is disposed in a heat sink cavity on the first surface.12. The power device assembly of claim 11, wherein the first surface is substantially on a same plane as a top surface of the power device assembly.13. The power device assembly of claim 11, wherein the S-cell and each of the one or more power devices define a channel extending around a perimeter each of the one or more power devices, and wherein the channel is printed upon until a top surface of the channel is substantially on the same plane as the first surface.14. The power device assembly of claim 13, wherein material printed upon the channel is constructed of a dielectric material.15. The power device assembly of claim 10, wherein each of the one or more power device cavities is shaped and sized to receive a power device of the one or more power devices.16. The power device assembly of claim 10, wherein a top surface of the S-cell is substantially in a same plane as a top surface of the power device assembly.
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