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Power device assemblies and methods of fabricating the same

專(zhuān)利號(hào)
US11997838B2
公開(kāi)日期
2024-05-28
申請(qǐng)人
Toyota Motor Engineering & Manufacturing North America Inc.(US TX Plano)
發(fā)明人
Feng Zhou; Yanghe Liu; Hiroshi Ukegawa
IPC分類(lèi)
H05K7/20; H01L23/367
技術(shù)領(lǐng)域
power,assembly,graphite,sink,device,manifold,heat,coolant,cavity,assemblies
地域: TX TX Plano

摘要

Disclosed herein are apparatus and methods for a power electronics assembly that includes a cold plate assembly and one or more power device assemblies. The cold plate assembly has a manifold having a heat sink cavity in a first surface and a heat sink that includes one or more substrate cavities. The heat sink is positioned in the heat sink cavity. The one or more power device assemblies are positioned within the one or more substrate cavities. Each power device assembly includes an S-cell, a power device, and a direct bonded metal substrate bonded to the S-Cell. The S-cell includes a base layer constructed at least of graphite or a graphite-composite, a conductive layer at least partially surrounding the base layer, and a power device cavity. The power device is positioned in the power device cavity and is electrically coupled to the conductive layer.

說(shuō)明書(shū)

Referring now to FIG. 3, the power device assembly 114 is shown in an exploded view, according to various embodiments. The plurality of power device assemblies 114 are embedded (e.g. disposed) onto the plurality of substrate cavities 112. As a non-limiting example, the plurality of power device assemblies 114 may define an inverter circuit for powering an electric device, such as an electric motor. Each of the power device assemblies 114 include a Direct Bonded Metal (DBM) substrate 119 (shown in FIG. 6). The DBM substrate 119 includes a ceramic layer (e.g., alumina) sandwiched (e.g., interposed) between two metal layers (e.g., Cu or Al). The DBM substrate 119 provides electrical insulation for the power device assemblies 114 from each other. Each DBM substrate 119 is bonded to the power device cavity 122 via a first bonding layer (e.g., adhesive layer). The first bonding layer is positioned on a bottom surface and/or side surfaces of the power device cavity 122 and is configured to bond components to the power device cavity 122. The first bonding layer may composed of silver sintering, soldering, Transient Liquid Phase bonding (TLP) or any other suitable bonding material. The S-cell 116 may then be bonded to the DBM substrate 119 via a second bonding layer interposed between the S-cell 116 and the DBM substrate 119.

權(quán)利要求

1
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