In embodiments, the spacer 224 may separate the source electrode 226 and the drain electrode 228. The spacer 224 may include a first dielectric material, and the top dielectric layer 229 may include a second dielectric material different from the first dielectric material. The spacer 224 may have a width L3 that is about 5% to 15% of the width L1 of the source electrode 226. In embodiments, the spacer 224 may overlap with the gate electrode 222, (e.g., such that it is possible to draw a straight vertical line, e.g., a vertical line 211 or a vertical line 213 that is orthogonal to a plane of the substrate 220, connecting one point within the first component to another point within the second component). In some embodiments, the spacer 224 may fully overlap with the gate electrode 222 (with all portions of the spacer 224 located vertically above or below the gate electrode 222), as shown in FIG. 2. In addition, the gate electrode 222 may partially overlap with the source electrode 226 and the drain electrode 228. In some other embodiments, the spacer 224 may partially overlap with the gate electrode 222.

As shown in FIG. 2, a gate length, Lg, of the gate electrode 222 may be determined by the spacer 224, where the gate length may be a same as the width of the spacer 224, e.g., Lg=L3. On the other hand, the gate electrode 222 may have a physical length L4, which may be a same or slightly larger than the width of the spacer 224. In some embodiments, the physical length L4 may be 10% larger than the width L3 of the spacer 224.