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Thin film transistors with spacer controlled gate length

專利號(hào)
US11997847B2
公開(kāi)日期
2024-05-28
申請(qǐng)人
Intel Corporation(US CA Santa Clara)
發(fā)明人
Abhishek A. Sharma; Van H. Le; Gilbert Dewey; Shriram Shivaraman; Yih Wang; Tahir Ghani; Jack T. Kavalieros
IPC分類
H01L29/417; H01L29/45; H01L29/49; H01L29/51; H01L29/66; H01L29/786; H10B12/00
技術(shù)領(lǐng)域
electrode,tft,spacer,gate,may,dielectric,drain,layer,source,in
地域: CA CA Santa Clara

摘要

Embodiments herein describe techniques for a semiconductor device including a TFT having a gate electrode with a gate length determined by a spacer. Embodiments may include a gate electrode above a substrate, a channel layer above the gate electrode, and a source electrode, a drain electrode, and a spacer above the channel layer. The drain electrode may be separated from the source electrode by the spacer. The drain electrode and the source electrode may have different widths or include different materials. Furthermore, the spacer may overlap with the gate electrode, hence the gate length of the gate electrode may be determined by the spacer width. Other embodiments may be described and/or claimed.

說(shuō)明書

FIG. 6 illustrates a computing device 600 in accordance with one embodiment of the disclosure. The computing device 600 may include a number of components. In one embodiment, these components are attached to one or more motherboards. In an alternate embodiment, some or all of these components are fabricated onto a single system-on-a-chip (SoC) die, such as a SoC used for mobile devices. The components in the computing device 600 include, but are not limited to, an integrated circuit die 602 and at least one communications logic unit 608. In some implementations the communications logic unit 608 is fabricated within the integrated circuit die 602 while in other implementations the communications logic unit 608 is fabricated in a separate integrated circuit chip that may be bonded to a substrate or motherboard that is shared with or electronically coupled to the integrated circuit die 602. The integrated circuit die 602 may include a processor 604 as well as on-die memory 606, often used as cache memory, which can be provided by technologies such as embedded DRAM (eDRAM), or SRAM. For example, the on-die memory 606 may include the TFT 114 shown in FIG. 1, the TFT 214 shown in FIG. 2, the TFT 314 or the TFT 304 shown in FIG. 3, or a TFT formed according to the process 400 shown in FIG. 4.

權(quán)利要求

1
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