Example 10 may include the method of example 9 and/or some other examples herein, wherein the source electrode is a first source electrode, the spacer is a first spacer, and the method further comprising: forming a second source electrode above the channel layer, wherein the second source electrode is separated from the first source electrode by the pitch; and forming a second spacer between the drain electrode and the second source electrode and above the channel layer.

Example 11 may include the method of example 9 and/or some other examples herein, wherein the second width is about 5% to 15% of the first width.

Example 12 may include the method of example 9 and/or some other examples herein, where the source electrode includes a first conductive material, and the drain electrode includes a second conductive material different from the first conductive material.

Example 13 may include the method of example 9 and/or some other examples herein, where the first width is different from the third width.

Example 14 may include the method of any one of examples 9-13 and/or some other examples herein, further comprising: forming a top dielectric layer above the source electrode, the drain electrode, and the spacer, wherein the spacer includes a first dielectric material, and the top dielectric layer includes a second dielectric material different from the first dielectric material.

Example 15 may include the method of any one of examples 9-13 and/or some other examples herein, wherein the gate dielectric layer includes silicon and oxygen, silicon and nitrogen, yttrium and oxygen, silicon, oxygen, and nitrogen, aluminum and oxygen, hafnium and oxygen, tantalum and oxygen, or titanium and oxygen.