Organic light emitting display device
地域：
Seoul
摘要
An organic light emitting display device may include a first thin film transistor disposed above a substrate and including a first active layer that is formed of a first material and includes a first source region, a first channel region, and a first drain region, a first gate electrode, and a first source electrode and a first drain electrode, at least one insulating layer disposed on the first gate electrode and a second thin film transistor disposed on the insulating layer and including a second active layer that is formed of a second material and includes a second source region, a second channel region, and a second drain region, a second gate electrode, and a second source electrode and a second drain electrode, wherein the first source electrode and the first drain electrode are electrically connected to the first active layer through a first contact hole, and wherein the first active layer under the first contact hole has an asymmetric structure.
說明書
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
This application claims the benefit of and priority to Republic of Korea Patent Application No. 10-2020-0187565 filed on Dec. 30, 2020 in the Republic of Korea, the entire contents of which are hereby expressly incorporated by reference into the present application.
The present disclosure relates to an organic light emitting display device including a multi-type thin film transistor, and more particularly, to an organic light emitting display device in which different types of thin film transistors are disposed on a single substrate.
Recently, as our society advances toward an information-oriented society, the field of display devices for visually expressing an electrical information signal has rapidly advanced. Various display devices having excellent performance in terms of thinness, lightness, and low power consumption, are being developed correspondingly.
Specific examples of such a display device may include a liquid crystal display (LCD), and electroluminescent display devices such as an organic light emitting display (OLED) and a quantum dot light emitting display (QLED). In particular, the electroluminescent display device is a next-generation display device having self-luminous properties, and has superior characteristics in terms of a viewing angle, contrast, a response speed, power consumption, and the like, compared to the liquid crystal display.
權(quán)利要求
What is claimed is:1. An organic light emitting display device, comprising:a first thin film transistor disposed above a substrate and including:a first active layer that is formed of a first material and includes a first source region, a first channel region, and a first drain region, a first gate electrode that overlaps the first active layer with a first gate insulating layer interposed therebetween, and a first source electrode and a first drain electrode that are electrically connected to the first active layer; at least one insulating layer disposed on the first gate electrode; and a second thin film transistor disposed on the insulating layer and including:a second active layer that is formed of a second material and includes a second source region, a second channel region, and a second drain region, a second gate electrode that overlaps the second active layer with a second gate insulating layer interposed therebetween, and a second source electrode and a second drain electrode that are electrically connected to the second active layer, wherein the first source electrode or the first drain electrode is electrically connected to the first active layer through a first contact hole, wherein an upper surface of the first active layer extends in a first direction, a side surface of the first active layer extends in a second direction different from the first direction, and wherein the upper surface and the side surface of the first active layer are in contact with the first source electrode or the first drain electrode, and wherein a portion of the first active layer in contact with the first source electrode or the first drain electrode is asymmetric in top-bottom or left-right shape when viewed from a plan view. 2. The organic light emitting display device of claim 1 , further comprising:a light emitting element disposed over the second thin film transistor and including an anode, a light emitting layer, and a cathode. 3. The organic light emitting display device of claim 1 , wherein the substrate includes a first substrate, a second substrate, and an inorganic insulating layer disposed between the first substrate and the second substrate. 4. The organic light emitting display device of claim 3 , the first substrate and the second substrate are made of polyimide (PI). 5. The organic light emitting display device of claim 3 , further comprising:a first buffer layer disposed on the second substrate. 6. The organic light emitting display device of claim 5 , wherein portions of the first source electrode and the first drain electrode are respectively in contact with the upper surface of the first active layer, and other portions of the first source electrode and the first drain electrode are respectively in contact with the side surface of the first active layer. 7. The organic light emitting display device of claim 6 , wherein the other portions of the of the first source electrode and the first drain electrode are in contact with the first buffer layer. 8. The organic light emitting display device of claim 1 , wherein the at least one insulating layer includes a first interlayer insulating layer and a second buffer layer. 9. The organic light emitting display device of claim 8 , further comprising:a second interlayer insulating layer disposed on the second gate electrode. 10. The organic light emitting display device of claim 9 , wherein the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode are disposed on the second interlayer insulating layer. 11. The organic light emitting display device of claim 9 , wherein the second source electrode or the second drain electrode is electrically connected to the second active layer through a second contact hole, andwherein the second active layer under the second contact hole has a symmetrical structure. 12. The organic light emitting display device of claim 1 , wherein an edge of the first active layer under the first contact hole has a linear shape or a curved shape. 13. The organic light emitting display device of claim 1 , wherein an edge of the first active layer under the first contact hole has an uneven shape in which the edge is bent one or more times. 14. The organic light emitting display device of claim 1 , wherein the first active layer is made of low-temperature polysilicon, andwherein the second active layer is made of an oxide semiconductor. 15. A light emitting display device, comprising:a light emitting element; a first thin film transistor disposed on a substrate and including:a first active layer formed of a first material and includes a first source region, a first channel region, and a first drain region, a first gate electrode overlapping the first active layer, a first gate insulating layer between the first active layer and the first gate electrode, and a first source electrode and a first drain electrode electrically connected to the first active layer; one or more insulating layers disposed on the first gate electrode; and a second thin film transistor disposed on at least one of the one or more insulating layers, wherein at least one of the first source electrode or the first drain electrode is electrically connected to the first active layer through a first contact hole in the one or more insulating layers that exposes a side surface of the first active layer, and wherein an upper surface of the first active layer extends in a first direction, the side surface of the first active layer extends in a second direction different from the first direction, and wherein the upper surface and the side surface of the first active layer are in contact with the first source electrode or the first drain electrode, and wherein a portion of the first active layer in contact with the first source electrode or the first drain electrode is asymmetric in top-bottom or left-right shape when viewed from a plan view. 16. The light emitting device of claim 15 , wherein the first material includes poly-silicon. 17. The light emitting device of claim 15 , wherein the second thin film transistor includes a second active layer formed of a second material, and wherein the second material includes oxide semiconductor. 18. The light emitting device of claim 15 , wherein the first active layer is formed on a buffer layer, and wherein the at least one of the first source electrode or the first drain electrode contacts a top surface of the buffer layer. 19. The light emitting device of claim 15 , wherein the first contact hole exposes at least a portion of the first active layer including the side surface of the first active layer. 20. The light emitting device of claim 19 , wherein a top surface of the exposed portion of the first active layer is shaped asymmetrically with respect to a reference line extending in the first direction. 21. The light emitting device of claim 20 , wherein the top surface of the exposed portion of the first active layer is shaped asymmetrically with respect to another reference line extending in the second direction intersecting the first direction. 22. The light emitting device of claim 19 , wherein an edge of the exposed portion of the first active layer has a curved shape or a shape having one or more bent portions. 23. The light emitting device of claim 15 , wherein the second thin film transistor includes:a second active layer, a second source electrode and a second drain electrode electrically connected to the second active layer, wherein at least one of the second source electrode or the second drain electrode contacts a top surface of the second active layer. 24. The light emitting device of claim 23 , further comprising at least one interlayer insulating layer on the second thin film transistor, and at least a part of the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode are disposed on the at least one interlayer insulating layer. 25. The light emitting device of claim 15 , wherein the first thin film transistor and the second thin film transistor are formed on a same substrate.
意見反饋
使用該功能遇到問題