Meanwhile, the organic light emitting display device 100 according to the exemplary embodiment of the present disclosure configured as described above, is characterized that the first active layer 121 under the contact hole of the first thin film transistor 120, that is, the LIPS thin film transistor, is designed asymmetrically to thereby be in side contact with the source and drain electrodes 122 and 123. In other words, at least one of the first source electrode 122 and the first drain electrode 123 may be connected to the first active layer 121 through one or more first contact holes in the first gate insulating layer 112, the first interlayer insulating layer 113, the second buffer layer 114, and the second interlayer insulating layer 116. The first contact holes may expose at least a side surface of the first active layer 121, and at least one of the first source electrode 122 or the first drain electrode 123 may contact the exposed side surface of the first active layer 121.

For example, the first source electrode 122 may be connected to the source region 121b through a first source contact hole that exposes a side surface of the active layer 121 in the source region 121b. The first source electrode 122 may contact the side surface of the first active layer 121. Similarly, the drain electrode 123 may be connected to the drain region 121c through a first drain contact hole that exposes a side surface of the active layer 121 in the drain region 121c. The first drain electrode 123 may contact the side surface of the first active layer 121.