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Display device and method for manufacturing display device

專利號(hào)
US12052892B2
公開日期
2024-07-30
申請(qǐng)人
Samsung Display Co., Ltd.（KR Yongin-Si）
發(fā)明人
Joung-Keun Park; Ki Wan Ahn; Joo Sun Yoon
IPC分類
H10K59/38; H10K50/813; H10K59/121; H10K59/122; H10K59/131
技術(shù)領(lǐng)域
electrode,layer,gate,capacitor,drain,first,second,pixel,177a,177b
地域： Yongin-Si

摘要

A display device includes: a substrate; signal lines including a gate line, a data line, and a driving voltage line that collectively define an outer boundary of a pixel area; a transistor connected to the signal line; a first electrode extending across the pixel area and formed on the signal line and the transistor, and connected to the transistor, the first electrode having a first portion overlying only the signal line and the transistor, and a second portion including all of the first electrode not included in the first portion; a pixel defining layer formed on only the first portion of the first electrode; an organic emission layer formed on substantially the entire second portion but not on the first portion; and a second electrode formed on the pixel defining layer and the organic emission layer.

說明書

While this invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. The various features of each embodiment described herein can be mixed and matched with each other in any combination, to form embodiments and arrangements not shown herein but which would be understood by one of ordinary skill in the art.

DESCRIPTION OF SYMBOLS

80, 8: Capacitor 81, 82: Contact hole 100: Substrate 120: Buffer layer 121: Gate line 135a: First semiconductor 135b: Second semiconductor 138: First capacitor electrode 140: Gate insulating layer 154a: First gate electrode 154b: Second gate electrode 158: Second capacitor electrode 160: First interlayer insulating layer 166a, 166b: Source contact hole 167a 167b: Drain contact hole 171: Data line 172: Driving voltage line 176a, 176b: Source electrode 177a, 177b: Drain electrode 178: Third capacitor electrode

權(quán)利要求

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