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Organic light-emitting device including heterocyclic compound with boron and nitrogen

專利號(hào)
US12052917B2
公開日期
2024-07-30
申請(qǐng)人
SAMSUNG DISPLAY CO., LTD.(KR Yongin-si)
發(fā)明人
Munki Sim; Soobyung Ko; Junha Park; Hankyu Pak; Jangyeol Baek; Chanseok Oh; Hyoyoung Lee
IPC分類
H10K85/60; C07F5/02; C09K11/06; H05B33/14; H10K50/11; H10K50/15; H10K50/16; H10K50/17; H10K85/30
技術(shù)領(lǐng)域
group,c60,c10,c1,q31,c6,monovalent,condensed,or,layer
地域: Yongin-si

摘要

An organic light-emitting device includes a first electrode, a second electrode facing the first electrode, and an organic layer between the first electrode and the second electrode and including an emission layer, the organic layer including a heterocyclic compound that includes boron and nitrogen.

說明書

In one or more embodiments, at least one selected from the first capping layer 210 and the second capping layer 220 may each independently include a compound selected from Compounds HT28 to HT33 and Compounds CP1 to CP5:

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Layers constituting the hole transport region, an emission layer, and layers constituting the electron transport region may be formed in a certain region by using one or more suitable methods selected from vacuum deposition, spin coating, casting, Langmuir-Blodgett (LB) deposition, ink-jet printing, laser-printing, and laser-induced thermal imaging.

When layers constituting the hole transport region, an emission layer, and layers constituting the electron transport region are formed by vacuum deposition, the deposition may be performed at a deposition temperature of about 100° C. to about 500° C., a vacuum degree of about 10?8 torr to about 10-3 torr, and a deposition speed of about 0.01 ?/sec to about 100 ?/sec by taking into account a material to be included in a layer to be formed, and the structure of a layer to be formed.

When layers constituting the hole transport region, an emission layer, and layers constituting the electron transport region are formed by spin coating, the spin coating may be performed at a coating speed of about 2,000 rpm to about 5,000 rpm and at a heat treatment temperature of about 80° C. to 200° C. by taking into account a material to be included in a layer to be formed, and the structure of a layer to be formed.

[Apparatus]

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