As previously disclosed, OLEDs and other similar devices may be fabricated using a variety of techniques and devices. For example, in OVJP and similar techniques, one or more jets of material is directed at a substrate to form the various layers of the OLED.
Methods of the Disclosure
In one aspect, the present disclosure relates to a method of passivating a transition metal dichalcogenide. Exemplary method 400 is provided in
In one embodiment, the light has a photon energy which is greater than or equal to the difference in energy between the HOMO of the donor material and the LUMO of the transition metal oxide.
There is no particular limit to the method of producing the transition metal dichalcogenide monolayer. In one embodiment, the transition metal dichalcogenide monolayer is produced via exfoliation, such as via adhesive exfoliation or via liquid-phase exfoliation. In one embodiment, the transition metal dichalcogenide monolayer is produced via chemical vapor deposition from suitable precursors, as would be understood by those of skill in the art. In one embodiment, the transition metal dichalcogenide monolayer is produced using molecular beam epitaxy.