In one embodiment, the method further comprises step 420, in which the monolayer is contacted with a superacid. As used herein, a “superacid” is understood to mean an acid with an acidity greater than or equal to that of concentrated sulfuric acid. Exemplary superacids include, but are not limited to, fluoroantimonic acid (HF:SbF5), magic acid (HSO3F:SbF5), fluoroboric acid (HF:BF3), fluorosulfuric acid (FSO3H), hydrogen fluoride (HF), triflic acid (HOSO2CF3), perchloric acid (HClO4), and bis(trifluoromethane)sulfonimide (bistriflimide; TFSI). In one embodiment, step 420 further comprises the step of annealing the monolayer at a temperature of about 100° C.
The step of depositing a composition comprising a transition metal oxide and an organic electron donor material over the monolayer may be performed using any method known to those of skill in the art. In one embodiment, the composition is deposited via vacuum thermal evaporation (VIE), spin-coating using solution processable compounds and/or precursors, or any other deposition method.
In one embodiment, the composition comprising a transition metal oxide and an organic electron donor material is deposited to a thickness between 1 nm and 50 nm. In one embodiment, the thickness I between 1 nm and 25 nm. In one embodiment, the thickness is between about 5 nm and about 15 nm. In one embodiment, the thickness is about 10 nm.