Organic electroluminescent device comprising two-dimensional emissive layer
摘要
說明書
In one embodiment, the transition metal oxide sublayer is deposited to a thickness of less than or about equal to 10 mu. In one embodiment, the transition metal oxide sublayer thickness is less than or about equal to 9 nm. In one embodiment, the transition metal oxide sublayer thickness is less than or about equal to 8 nm. In one embodiment, the transition metal oxide sublayer thickness is less than or about equal to 7 nm. In one embodiment, the transition metal oxide sublayer thickness is less than or about equal to 6 nm. In one embodiment, the transition metal oxide sublayer thickness is less than or about equal to 5 nm. In one embodiment, the transition metal oxide sublayer thickness is less than or about equal to 4 nm. In one embodiment, the transition metal oxide sublayer thickness is less than or about equal to 3 nm. In one embodiment, the transition metal oxide sublayer thickness is less than or about equal to 2 nm. In one embodiment, the transition metal oxide sublayer thickness is less than or about equal to 1 nm.
