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Method of making high critical temperature metal nitride layer

專利號(hào)
US12052935B2
公開日期
2024-07-30
申請人
Applied Materials, Inc.（US CA Santa Clara）
發(fā)明人
Zihao Yang; Mingwei Zhu; Shriram Mangipudi; Mohammad Kamruzzaman Chowdhury; Shane Lavan; Zhebo Chen; Yong Cao; Nag B. Patibandla
IPC分類
H10N60/01
技術(shù)領(lǐng)域
seed,layer,nitride,nbn,metal,oxynitride,snspd,deposition,e.g,can
地域： CA CA Santa Clara

摘要

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate at a first temperature, the seed layer being a nitride of a first metal, reducing the temperature of the substrate to a second temperature that is lower than the first temperature, increasing the temperature of the substrate to a third temperature that is higher than the first temperature to form a modified seed layer, and depositing a metal nitride superconductive layer directly on the modified seed layer at the third temperature, the superconductive layer being a nitride of a different second metal.

說明書

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to U.S. Application Ser. No. 62/980,101, filed on Feb. 21, 2020, the entire disclosure of which is incorporated by reference.

BACKGROUND Technical Field

The disclosure concerns use of a seed layer to improve the superconducting critical temperature of a metal nitride layer.

Background Discussion

In the context of superconductivity, the critical temperature (Tc) refers to the temperature below which a material becomes superconductive. Niobium nitride (NbN) is a material that can be used for superconducting applications, e.g., superconducting nanowire single photon detectors (SNSPD) for use in quantum information processing, defect analysis in CMOS, LIDAR, etc. The critical temperature of niobium nitride depends on the crystalline structure and atomic ratio of the material. For example, referring to FIG. 1, cubic δ-phase NbN has some advantages due to its relatively “high” critical temperature, e.g., 9.7-16.5 K (the indicated process temperatures are for a particular fabrication process, and not necessarily applicable other process and deposition chamber designs).

Niobium nitride can be deposited on a workpiece by physical vapor deposition (PVD). For example, a sputtering operation can be performed using a niobium target in the presence of nitrogen gas. The sputtering can be performed by inducing a plasma in the reactor chamber that contains the target and the workpiece.

SUMMARY

權(quán)利要求

1
What is claimed is:1. A method of fabricating a device including a superconductive layer, the method, comprising:depositing a seed layer on a substrate, the seed layer being an oxynitride of a first metal; anddepositing a metal nitride superconductive layer directly on the seed layer, the superconductive layer being a nitride of a different second metal.2. The method of claim 1, wherein the second metal is niobium, titanium, or a combination of niobium and titanium.3. The method of claim 2, wherein the first metal is aluminum.4. The method of claim 1, wherein depositing the seed layer and depositing the metal nitride superconductive layer are performed in a deposition tool without breaking vacuum.5. The method of claim 4, wherein depositing the seed layer and depositing the metal nitride superconductive layer comprise physical vapor deposition processes.6. The method of claim 1, wherein the first metal is aluminum.7. The method of claim 1, wherein depositing the upper seed layer comprises depositing a layer having a thickness of 3-50 nm.8. The method of claim 1, wherein depositing the seed layer and depositing the metal nitride superconductive layer comprise physical vapor deposition processes.9. The method of claim 1, wherein the seed layer has a (002) c-axis crystal orientation.10. A method of fabricating a device including a superconductive layer, the method, comprising:depositing a seed layer on a substrate at a first temperature, the seed layer being a nitride of a first metal;reducing the temperature of the substrate to a second temperature that is lower than the first temperature;increasing the temperature of the substrate to a third temperature that is higher than the first temperature to form a modified seed layer; anddepositing a metal nitride superconductive layer directly on the modified seed layer at the third temperature, the superconductive layer being a nitride of a different second metal.11. The method of claim 10, wherein the second metal is niobium nitride, titanium nitride, or niobium titanium nitride.12. The method of claim 11, wherein the first metal is aluminum.13. The method of claim 10, wherein the first metal is aluminum.14. The method of claim 10, comprising exposing the seed layer to an oxygen-containing gas or plasma before depositing the metal nitride superconductive layer.15. The method of claim 14, wherein exposing the seed layer to the oxygen-containing gas or plasma is performed with the substrate at the second temperature.16. The method of claim 14, wherein exposing the seed layer to the oxygen-containing gas or plasma is performed with the substrate at the first or third temperature.17. The method of claim 10, comprising maintaining the seed layer in an oxygen-free environment from depositing the seed layer to depositing the metal nitride superconductive layer.18. The method of claim 10, wherein second temperature is at least 200° C. lower than the first temperature.19. The method of claim 18, wherein second temperature is room temperature.20. The method of claim 10, wherein the second temperature is room temperature.
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