Circuits including non-linear components for electronic devices
摘要
說明書
The AMTFT 428 also includes a second gate electrode 434 that is positioned under a bottom side of the channel conductor region 432 opposite to the first gate electrode 430. The second gate electrode 434 has a width along the second direction that overlaps with the middle portion of the channel conductor region 432. The second gate electrode 434 is a region of amorphous metal formed on the non-conductive substrate 502. The second gate electrode 434 is coupled to the first gate electrode 430 and forms a second gate of the AMTFT 428. The dual gate structure of the AMTFT 428 may provide some advantages over a single gate structure—for example, the increased overlapping surface area of the first and second gate electrodes 432 and 434 on the middle portion of the channel conductor region 432 may facilitate faster switching times of the AMTFT 428 relative to a TFT structure having a single gate.
