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Circuits including non-linear components for electronic devices

專利號
US12075656B2
公開日期
2024-08-27
申請人
Amorphyx, Incorporated（US OR Corvallis）
發(fā)明人
Sean William Muir
IPC分類
G09G3/30; G09G3/3233; H10K59/121; G09G3/00
技術(shù)領(lǐng)域
electrode,amtft,first,amorphous,insulator,region,second,metal,layer,linear
地域： OR OR Corvallis

摘要

The present disclosure is directed to display circuitry that can be formed on a flexible substrate. The circuitry includes a voltage divider formed from a first and second non-linear resistor device or a first and second transistor coupled in a diode configuration. The circuitry includes a driving thin film transistor coupled to the voltage divider. The non-linear resistor devices may include a lower electrode that is amorphous metal or a crystalline metal. The first and second transistor coupled in a diode configuration may have a lower electrode that is amorphous metal. Upper electrodes may be crystalline metal. The driving thin film transistors may have the lower electrode as amorphous or crystalline metal.

說明書

A first insulator layer 904 is formed over the substrate 902 and covers the first gate electrode 804 and the electrode 819. The channel conductor region 806 is formed on the first insulator layer 904. A second insulator layer 906 is formed over the first insulator layer 904 and covers the channel conductor region 806.

The intermediate electrode 821 is formed through an opening in the first and second insulator layers 904, 906. The intermediate electrode 821 may be formed as a same conductive or metal layer as the first electrode region 808, which is formed on the second insulator layer 906 and overlaps the first gate electrode 804, a portion of the second gate electrode 819, and the channel conductor region 806. The first electrode region 808 ends at a location that is between ends of the electrode 819. The first electrode region 808 extends from a first end 829 to a second end 831 of the electrode 804. The first electrode region 808 is coupled to a surface (top surface in FIG. 8) closer to the first end 829 than the second end. The first electrode region 808 extends past and outermost end 833 of the channel conductor 806.

權(quán)利要求

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