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Circuits including non-linear components for electronic devices

專利號(hào)
US12075656B2
公開日期
2024-08-27
申請(qǐng)人
Amorphyx, Incorporated(US OR Corvallis)
發(fā)明人
Sean William Muir
IPC分類
G09G3/30; G09G3/3233; H10K59/121; G09G3/00
技術(shù)領(lǐng)域
electrode,amtft,first,amorphous,insulator,region,second,metal,layer,linear
地域: OR OR Corvallis

摘要

The present disclosure is directed to display circuitry that can be formed on a flexible substrate. The circuitry includes a voltage divider formed from a first and second non-linear resistor device or a first and second transistor coupled in a diode configuration. The circuitry includes a driving thin film transistor coupled to the voltage divider. The non-linear resistor devices may include a lower electrode that is amorphous metal or a crystalline metal. The first and second transistor coupled in a diode configuration may have a lower electrode that is amorphous metal. Upper electrodes may be crystalline metal. The driving thin film transistors may have the lower electrode as amorphous or crystalline metal.

說明書

The capacitor 1003 is coupled to a data line 1026 extending in a second direction that is transverse to the first direction. The data line 1026 includes a first plate electrode 1028 projecting from a side of the data line 1026. In one embodiment, a dimension in the first direction of the first plate electrode 1028 is greater than a dimension of the data line 1026 in the first direction. The data line 1026 and the first plate electrode 1028 are part of a continuous region of metal or other conductive material. The data line 1026 may extend into other circuits of an array of components (e.g., a pixel array) that have circuitry with the layout 1000 (or similar thereto).

The transistor 1002 includes a first electrode 1004 that is formed on a first surface 1013 of a substrate 1102. This first electrode is formed directly on this first surface 1013 as a smooth, thin, metal layer that is an amorphous metal alloy. The first electrode 1010 extends in a longest dimension along the first direction. A portion of the first electrode 1010 is part of the transistor 1002, that overlaps with a channel conductor region 1006. The channel conductor region 1006 extends in the second direction.

A second electrode 1008 overlaps the channel conductor region 1006, with a longest dimension in the first direction. The second electrode 1008 is a conductive or metal region. The second electrode 1008 may be formed of crystalline metal in some embodiments.

權(quán)利要求

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