Circuits including non-linear components for electronic devices
摘要
說明書
The first gate electrode 1008 is formed on the second insulator layer 1106 and overlaps the electrode 1010 and the channel conductor region 1006 at the AMTFT 1002. An opening is formed through the first and second insulator layer to provide access to the electrode 1010. The conductor region 1014 is also formed on the second insulator layer 1106. A third insulator layer 1108 is formed over the second insulator layer 1106 and covers the first gate electrode 1008 and the conductor region 1014.
The via or opening 1022 is formed in and extends through the third insulator layer 1108 to the conductor region 1014. The via 1024 is formed in and extends through the third insulator layer 1108, the second insulator layer 1106, and the first insulator layer 1104 to the second electrode region 1010.
The data line 1026, including the first plate electrode 1028, are formed on the third insulator layer 1108. The storage capacitor of the circuit is formed at an overlap of the first plate electrode 1028 on the electrode 1010.
