Another embodiment is directed to a device that includes a first non-linear device that includes a first plurality of amorphous metal regions; a second non-linear device that includes a second plurality of amorphous metal regions, the second non-linear device coupled to the first non-linear device; a first plate electrode coupled between the first non-linear device and the second-non-linear device along a first dimension, the first plate electrode extending along a second dimension transverse to the first dimension; a second plate electrode overlapping the first plate electrode along the second dimension; a first metal region extending along the first dimension and coupled to the second plate electrode; and an amorphous metal transistor that includes a channel conductor region and a first control electrode overlapping the channel conductor region, the first plate electrode and the first control electrode being a single continuous metal region.
The second plate electrode and the first metal region are a single continuous metal region. The first plate electrode connects the first non-linear device to the second non-linear device. The amorphous metal transistor including a second control electrode overlapping the channel conductor region, the first control node coupled to the second control node. A second metal region that overlaps the first control electrode and the second control electrode, wherein the second metal region electrically connects the first control electrode to the second control electrode.
At least one electrode of the first control electrode and the second control electrode is a region of amorphous metal. At least one electrode of the first plate electrode and the second plate electrode is a region of amorphous metal. At least one electrode of the first plate electrode and the second plate electrode is a region of crystalline metal.