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Circuits including non-linear components for electronic devices

專利號(hào)
US12075656B2
公開(kāi)日期
2024-08-27
申請(qǐng)人
Amorphyx, Incorporated(US OR Corvallis)
發(fā)明人
Sean William Muir
IPC分類
G09G3/30; G09G3/3233; H10K59/121; G09G3/00
技術(shù)領(lǐng)域
electrode,amtft,first,amorphous,insulator,region,second,metal,layer,linear
地域: OR OR Corvallis

摘要

The present disclosure is directed to display circuitry that can be formed on a flexible substrate. The circuitry includes a voltage divider formed from a first and second non-linear resistor device or a first and second transistor coupled in a diode configuration. The circuitry includes a driving thin film transistor coupled to the voltage divider. The non-linear resistor devices may include a lower electrode that is amorphous metal or a crystalline metal. The first and second transistor coupled in a diode configuration may have a lower electrode that is amorphous metal. Upper electrodes may be crystalline metal. The driving thin film transistors may have the lower electrode as amorphous or crystalline metal.

說(shuō)明書

Another embodiment is directed to a device that includes a first non-linear device that includes a first plurality of amorphous metal regions; a second non-linear device that includes a second plurality of amorphous metal regions, the second non-linear device coupled to the first non-linear device; a first plate electrode coupled between the first non-linear device and the second-non-linear device along a first dimension, the first plate electrode extending along a second dimension transverse to the first dimension; a second plate electrode overlapping the first plate electrode along the second dimension; a first metal region extending along the first dimension and coupled to the second plate electrode; and an amorphous metal transistor that includes a channel conductor region and a first control electrode overlapping the channel conductor region, the first plate electrode and the first control electrode being a single continuous metal region.

The second plate electrode and the first metal region are a single continuous metal region. The first plate electrode connects the first non-linear device to the second non-linear device. The amorphous metal transistor including a second control electrode overlapping the channel conductor region, the first control node coupled to the second control node. A second metal region that overlaps the first control electrode and the second control electrode, wherein the second metal region electrically connects the first control electrode to the second control electrode.

At least one electrode of the first control electrode and the second control electrode is a region of amorphous metal. At least one electrode of the first plate electrode and the second plate electrode is a region of amorphous metal. At least one electrode of the first plate electrode and the second plate electrode is a region of crystalline metal.

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