Circuits including non-linear components for electronic devices
摘要
說明書
A first via that extends between and electrically connects the first metal region and the second plate electrode. A third metal region extends along the first dimension and connects the first non-linear device to the second non-linear device and a fourth metal region that extends along the second dimension and overlaps the first plate electrode and the third metal region.
The channel conductor region includes a semiconductor material. The amorphous metal transistor is an amorphous metal hot electron transistor.
A method includes forming a plurality of amorphous metal regions on a non-conductive surface of a substrate; depositing a first conformal insulator layer over the plurality of amorphous metal regions; forming a semiconductor region on the first conformal insulator layer; depositing a second conformal insulator layer over the semiconductor region; forming a plurality of first metal regions on the second conformal insulator layer; patterning openings in the second conformal insulator layer; depositing a third conformal insulator layer over the plurality of first metal regions; and forming a plurality of second metal regions on the third conformal insulator layer.
The method includes forming the first conformal insulator layer and forming the second conformal insulator includes forming the first conformal insulator layer and the second conformal insulator to have a combined thickness of 20 nm or less. The method also includes forming the third conformal layer includes forming the third conformal layer to have a thickness greater than a thickness of the first conformal insulator layer or a thickness of the second conformal insulator layer.
