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Display apparatus

專利號(hào)
US12075661B2
公開(kāi)日期
2024-08-27
申請(qǐng)人
LG Display Co., Ltd.(KR Seoul)
發(fā)明人
Kyeong-Ju Moon; So-Young Noh; Ki-Tae Kim; Hyuk Ji
IPC分類
H01L29/786; H10K59/124
技術(shù)領(lǐng)域
electrode,transistor,film,layer,thin,gate,insulating,pattern,may,first
地域: Seoul

摘要

A display apparatus includes a first TFT in a display area including a first semiconductor pattern including a polysilicon, a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating layer is interposed, and first source and drain electrodes connected to the first semiconductor pattern, a second TFT in the display area including a second semiconductor pattern including a first oxide semiconductor, a second gate electrode overlapping with the second semiconductor pattern under conditions that second and third gate insulating layers are interposed, second source and drain electrodes connected to the second semiconductor pattern, and a third TFT in a non-display area including a third semiconductor pattern including a second oxide semiconductor, a third gate electrode overlapping with the third semiconductor pattern under conditions that the third gate insulating layer is interposed, and third source and drain electrodes connected to the third semiconductor pattern.

說(shuō)明書(shū)

Referring to FIG. 1, the display apparatus 100 according to the illustrated exemplary embodiment of the present disclosure may include the substrate 110, a first buffer layer 111, a first gate insulating layer 112, a first interlayer insulating layer 113, a second buffer layer 114, a second gate insulating layer 115, a third gate insulating layer 116, a second interlayer insulating layer 117, a first passivation layer 118, a second passivation layer 119, a bank layer 120, a spacer 121, a first storage capacitor 140, a second storage capacitor 150, a first connecting electrode 160, a second connecting electrode 170, an auxiliary electrode 180, a light emitting element 400, an encapsulator 500, the first thin film transistor 310, the second thin film transistor 320, the third thin film transistor 330, and the fourth thin film transistor 340.

The substrate 110 may support various constituent elements of the display apparatus 100. The substrate 110 may be made of glass or a plastic material having flexibility. For example, when the substrate 110 is made of a plastic material, polyimide (PI) may be used for the plastic material. When the substrate 110 is made of polyimide (PI), a process of manufacturing the display apparatus is carried out under the condition that a support substrate made of glass is disposed beneath the substrate 110. After completion of the manufacturing process, the support substrate may be released. After release of the support substrate, a back plate for supporting the substrate 110 may be disposed beneath the substrate 110.

權(quán)利要求

1
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