Display apparatus
摘要
說(shuō)明書(shū)
When the first buffer layer 111 has a multilayer structure in which silicon nitride (SiNx) layers and silicon oxide (SiOx) layers are alternately formed, as described above, uppermost and lowermost layers of the first buffer layer 111 may be made of silicon oxide (SiOx). For example, the first buffer layer 111, which is constituted by a plurality of layers, may include an upper layer contacting a first semiconductor pattern 311 of the first thin film transistor 310 and a fourth semiconductor pattern 341 of the fourth thin film transistor 340, a lower layer contacting the substrate 110, and an intermediate layer disposed between the upper layer and the lower layer. In this case, the upper layer and the lower layer may be made of silicon oxide (SiOx). In addition, the upper layer of the first buffer layer 111, which has a multilayer structure, may be formed to have a greater thickness than the lower layer and the intermediate layer.
