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Display apparatus

專利號(hào)
US12075661B2
公開日期
2024-08-27
申請(qǐng)人
LG Display Co., Ltd.（KR Seoul）
發(fā)明人
Kyeong-Ju Moon; So-Young Noh; Ki-Tae Kim; Hyuk Ji
IPC分類
H01L29/786; H10K59/124
技術(shù)領(lǐng)域
electrode,transistor,film,layer,thin,gate,insulating,pattern,may,first
地域： Seoul

摘要

A display apparatus includes a first TFT in a display area including a first semiconductor pattern including a polysilicon, a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating layer is interposed, and first source and drain electrodes connected to the first semiconductor pattern, a second TFT in the display area including a second semiconductor pattern including a first oxide semiconductor, a second gate electrode overlapping with the second semiconductor pattern under conditions that second and third gate insulating layers are interposed, second source and drain electrodes connected to the second semiconductor pattern, and a third TFT in a non-display area including a third semiconductor pattern including a second oxide semiconductor, a third gate electrode overlapping with the third semiconductor pattern under conditions that the third gate insulating layer is interposed, and third source and drain electrodes connected to the third semiconductor pattern.

說明書

The polycrystalline silicon thin film transistor (poly_Si TFT) is manufactured through deposition of amorphous silicon and crystallization of the deposited amorphous silicon. The polycrystalline silicon thin film transistor has advantages in that the polycrystalline silicon thin film transistor has high electron mobility, excellent stability while achieving thinness, high resolution and high electric power efficiency. As such a polycrystalline silicon thin film transistor, there is a low temperature polycrystalline silicon (LTPS) thin film transistor or a polysilicon thin film transistor. In such a polycrystalline silicon thin film transistor, however, crystallization of amorphous silicon is required in a manufacturing process of the polycrystalline silicon thin film transistor. For this reason, an increase in the number of processes and an increase in manufacturing costs occur. Furthermore, crystallization should be carried out at a high process temperature. As a result, application of the polycrystalline silicon thin film transistor to a large-area apparatus is difficult. In addition, it is difficult to secure uniformity of the polycrystalline silicon thin film transistor due to characteristics of polycrystallinity.

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