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Display apparatus

專利號
US12075661B2
公開日期
2024-08-27
申請人
LG Display Co., Ltd.（KR Seoul）
發(fā)明人
Kyeong-Ju Moon; So-Young Noh; Ki-Tae Kim; Hyuk Ji
IPC分類
H01L29/786; H10K59/124
技術(shù)領(lǐng)域
electrode,transistor,film,layer,thin,gate,insulating,pattern,may,first
地域： Seoul

摘要

A display apparatus includes a first TFT in a display area including a first semiconductor pattern including a polysilicon, a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating layer is interposed, and first source and drain electrodes connected to the first semiconductor pattern, a second TFT in the display area including a second semiconductor pattern including a first oxide semiconductor, a second gate electrode overlapping with the second semiconductor pattern under conditions that second and third gate insulating layers are interposed, second source and drain electrodes connected to the second semiconductor pattern, and a third TFT in a non-display area including a third semiconductor pattern including a second oxide semiconductor, a third gate electrode overlapping with the third semiconductor pattern under conditions that the third gate insulating layer is interposed, and third source and drain electrodes connected to the third semiconductor pattern.

說明書

As apparent from the above description, when the gate insulating layer of a thin film transistor is formed to have a large thickness, there may be an advantage in that leakage of current is reduced and, as such, an amount of current may be effectively controlled. However, when the thickness of the gate insulating layer of the thin film transistor increases, characteristics of a switching function may be degraded due to a decrease in mobility. On the other hand, when the gate insulating layer of the thin film transistor has a relatively small thickness, there may be an advantage in that characteristics of a switching function may be enhanced due to an increase in mobility. However, as the thickness of the gate insulating layer decreases, current leakage increases, thereby causing characteristics of a current amount control function to be degraded. Therefore, in the display apparatus 100 according to the exemplary embodiment of the present disclosure, the thickness of the gate insulating layer may be designed to be varied in accordance with characteristics of the thin film transistor. Accordingly, the display apparatus 100 may include thin film transistors having different mobilities.

權(quán)利要求

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