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Display apparatus

專利號(hào)
US12075661B2
公開日期
2024-08-27
申請(qǐng)人
LG Display Co., Ltd.（KR Seoul）
發(fā)明人
Kyeong-Ju Moon; So-Young Noh; Ki-Tae Kim; Hyuk Ji
IPC分類
H01L29/786; H10K59/124
技術(shù)領(lǐng)域
electrode,transistor,film,layer,thin,gate,insulating,pattern,may,first
地域： Seoul

摘要

A display apparatus includes a first TFT in a display area including a first semiconductor pattern including a polysilicon, a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating layer is interposed, and first source and drain electrodes connected to the first semiconductor pattern, a second TFT in the display area including a second semiconductor pattern including a first oxide semiconductor, a second gate electrode overlapping with the second semiconductor pattern under conditions that second and third gate insulating layers are interposed, second source and drain electrodes connected to the second semiconductor pattern, and a third TFT in a non-display area including a third semiconductor pattern including a second oxide semiconductor, a third gate electrode overlapping with the third semiconductor pattern under conditions that the third gate insulating layer is interposed, and third source and drain electrodes connected to the third semiconductor pattern.

說明書

The auxiliary electrode 180 may be disposed on the first passivation layer 118. In addition, the auxiliary electrode 180 may be connected to the second drain electrode 323 of the second thin film transistor 320 via the contact hole of the first passivation layer 118. The auxiliary electrode 180 may electrically connect the second thin film transistor 320 and the first electrode 410. The auxiliary electrode 180 may be formed by a single layer or multiple layers made of at least one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni) or neodymium (Nd) or an alloy thereof. The auxiliary electrode 180 may be made of the same material as the second source electrode 322 and the second drain electrode 323 of the second thin film transistor 320.

The second passivation layer 119 may be disposed on the auxiliary electrode 180 and the first passivation layer 118. In addition, as illustrated in FIG. 1, a contact hole may be formed through the second passivation layer 119 to expose the auxiliary electrode 180. The second passivation layer 119 may be an organic material layer. For example, the second passivation layer 119 may be made of an organic material such as acryl resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

權(quán)利要求

1
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