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Display apparatus

專利號
US12075661B2
公開日期
2024-08-27
申請人
LG Display Co., Ltd.（KR Seoul）
發(fā)明人
Kyeong-Ju Moon; So-Young Noh; Ki-Tae Kim; Hyuk Ji
IPC分類
H01L29/786; H10K59/124
技術領域
electrode,transistor,film,layer,thin,gate,insulating,pattern,may,first
地域： Seoul

摘要

A display apparatus includes a first TFT in a display area including a first semiconductor pattern including a polysilicon, a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating layer is interposed, and first source and drain electrodes connected to the first semiconductor pattern, a second TFT in the display area including a second semiconductor pattern including a first oxide semiconductor, a second gate electrode overlapping with the second semiconductor pattern under conditions that second and third gate insulating layers are interposed, second source and drain electrodes connected to the second semiconductor pattern, and a third TFT in a non-display area including a third semiconductor pattern including a second oxide semiconductor, a third gate electrode overlapping with the third semiconductor pattern under conditions that the third gate insulating layer is interposed, and third source and drain electrodes connected to the third semiconductor pattern.

說明書

A contact hole may be formed through the passivation layer 215 to expose the first drain electrode 353 of the first thin film transistor 350. However, the present disclosure is not limited to the above-described condition. A contact hole may be formed through the passivation layer 215 to expose the first source electrode 352 of the first thin film transistor 350. The passivation layer 215 may be a single layer or multiple layers made of an organic material. For example, the passivation layer 215 may be a single layer or multiple layers made of an organic material such as acryl resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. Alternatively, the passivation layer 215 may be constituted by a single layer made of an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx) or multiple layers thereof. Otherwise, the passivation layer 215 may be multiple layers constituted by an inorganic material layer and an organic material layer.

權利要求

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