In another aspect of the present disclosure, a display apparatus includes a substrate including a display area and a non-display area disposed adjacent to the display area, a first thin film transistor disposed in the display area of the substrate, the first thin film transistor including a first semiconductor pattern including a first oxide semiconductor, a first gate electrode overlapping with the first semiconductor pattern under a condition that a second gate insulating layer and a third gate insulating layer are interposed between the first gate electrode and the first semiconductor pattern, a first source electrode connected to the first semiconductor pattern, and a first drain electrode connected to the first semiconductor pattern, a second thin film transistor disposed in the display area of the substrate, the second thin film transistor including a second semiconductor pattern including a second oxide semiconductor, a second gate electrode overlapping with the second semiconductor pattern under a condition that the third gate insulating layer is interposed between the second gate electrode and the second semiconductor pattern, a second source electrode connected to the second semiconductor pattern, and a second drain electrode connected to the second semiconductor pattern, and a third thin film transistor disposed in the non-display area of the substrate, the third thin film transistor including a third semiconductor pattern including a polysilicon, a third gate electrode overlapping with the third semiconductor pattern under a condition that a first gate insulating layer is interposed between the third gate electrode and the third semiconductor pattern, and a third source electrode connected to the third semiconductor pattern, and a third drain electrode connected to the third semiconductor pattern.