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Display apparatus

專利號
US12075661B2
公開日期
2024-08-27
申請人
LG Display Co., Ltd.（KR Seoul）
發(fā)明人
Kyeong-Ju Moon; So-Young Noh; Ki-Tae Kim; Hyuk Ji
IPC分類
H01L29/786; H10K59/124
技術(shù)領(lǐng)域
electrode,transistor,film,layer,thin,gate,insulating,pattern,may,first
地域： Seoul

摘要

A display apparatus includes a first TFT in a display area including a first semiconductor pattern including a polysilicon, a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating layer is interposed, and first source and drain electrodes connected to the first semiconductor pattern, a second TFT in the display area including a second semiconductor pattern including a first oxide semiconductor, a second gate electrode overlapping with the second semiconductor pattern under conditions that second and third gate insulating layers are interposed, second source and drain electrodes connected to the second semiconductor pattern, and a third TFT in a non-display area including a third semiconductor pattern including a second oxide semiconductor, a third gate electrode overlapping with the third semiconductor pattern under conditions that the third gate insulating layer is interposed, and third source and drain electrodes connected to the third semiconductor pattern.

說明書

On the second interlayer insulating layer 117, the first source electrode 352 and the first drain electrode 353 of the first thin film transistor 350, the second source electrode 322 and the second drain electrode 323 of the second thin film transistor 320, and the third source electrode 362 and the third drain electrode 363 of the third thin film transistor 360 may be disposed.

The first source electrode 352 and the first drain electrode 353 of the first thin film transistor 350 may be connected to the first source region 351S and the first drain region 351D of the first semiconductor pattern 351 via the contact holes formed through the second interlayer insulating layer 117, the third gate insulating layer 116 and the second gate insulating layer 115, respectively.

In addition, the second source electrode 322 and the second drain electrode 323 of the second thin film transistor 320 may be connected to the second source region 321S and the second drain region 321D of the second semiconductor pattern 321 via the contact holes formed through the second interlayer insulating layer 117 and the third gate insulating layer 116, respectively.

權(quán)利要求

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