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Display apparatus

專利號
US12075661B2
公開日期
2024-08-27
申請人
LG Display Co., Ltd.（KR Seoul）
發(fā)明人
Kyeong-Ju Moon; So-Young Noh; Ki-Tae Kim; Hyuk Ji
IPC分類
H01L29/786; H10K59/124
技術(shù)領(lǐng)域
electrode,transistor,film,layer,thin,gate,insulating,pattern,may,first
地域： Seoul

摘要

A display apparatus includes a first TFT in a display area including a first semiconductor pattern including a polysilicon, a first gate electrode overlapping with the first semiconductor pattern under conditions that a first gate insulating layer is interposed, and first source and drain electrodes connected to the first semiconductor pattern, a second TFT in the display area including a second semiconductor pattern including a first oxide semiconductor, a second gate electrode overlapping with the second semiconductor pattern under conditions that second and third gate insulating layers are interposed, second source and drain electrodes connected to the second semiconductor pattern, and a third TFT in a non-display area including a third semiconductor pattern including a second oxide semiconductor, a third gate electrode overlapping with the third semiconductor pattern under conditions that the third gate insulating layer is interposed, and third source and drain electrodes connected to the third semiconductor pattern.

說明書

The non-display area NDA may be disposed adjacent to the display area DA in the substrate 210. A driving circuit configured to drive the pixels of the display area DA may be disposed in the non-display area NDA. The driving circuit may include a third thin film transistor 330. The third thin film transistor 330 disposed in the non-display area NDA may include oxide semiconductor.

The first thin film transistor 350 and the second thin film transistor 320 disposed in the display area DA may be constituted by a negative type thin film transistor (n-type TFT). In addition, the third thin film transistor 330 disposed in the non-display area NDA may be constituted by a negative type thin film transistor (n-type TFT).

The substrate 210 may support various constituent elements of the display apparatus 40. The substrate 210 may be made of glass or a plastic material having flexibility. For example, when the substrate 210 is made of a plastic material, the substrate 210 may be made of polyimide (PI).

In order to avoid performance degradation caused by penetration of moisture in the display apparatus 40 according to the exemplary embodiment of the present disclosure, the first metal pattern 610, the second metal pattern 620 and the third metal pattern 630 may be formed on the substrate 210.

In addition, the first metal pattern 610, the second metal pattern 620 and the third metal pattern 630 may have a light shield function for reducing external light from being incident upon semiconductor patterns of the first thin film transistor 350, the second thin film transistor 320 and the third thin film transistor 330.

權(quán)利要求

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