Display apparatus
摘要
說明書
The first thin film transistor 350 may be disposed on the buffer layer 211. The first thin film transistor 350 may be disposed in the display area DA of the display apparatus 40.
The first thin film transistor 350 disposed in the display area DA may include the first semiconductor pattern 351, a first gate electrode 354, a first source electrode 352, and a first drain electrode 353.
The first semiconductor pattern 351 of the first thin film transistor 350, the second semiconductor pattern 321 of the second thin film transistor 320, and the third semiconductor pattern 331 of the third thin film transistor 330 may be formed on the buffer layer 211. The first semiconductor pattern 351 and the second semiconductor pattern 321 may be disposed in the display area DA, whereas the third semiconductor pattern 331 may be disposed in the non-display area NDA. In addition, the first semiconductor pattern 351 may be disposed to overlap with the first metal pattern 610, whereas the second semiconductor pattern 321 may overlap with the second metal pattern 620. In addition, the third semiconductor pattern 351 may overlap with the third metal pattern 630. Each of the first semiconductor pattern 351, the second semiconductor pattern 321 and the third semiconductor pattern 331 may be an oxide semiconductor pattern made of an oxide semiconductor.
