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Semiconductor device

專利號(hào)
US12082387B2
公開日期
2024-09-03
申請(qǐng)人
KIOXIA CORPORATION（JP Tokyo）
發(fā)明人
Yuki Inuzuka
IPC分類
G11C16/10; G11C16/04; H10B43/27
技術(shù)領(lǐng)域
qlc,memory,plc,mt,cell,voltage,word,vpass1,in,mt0
地域： Tokyo

摘要

A semiconductor device includes a plurality of conductive layers stacked above one another in a first direction and including a first conductive layer, second conductive layers, and third conductive layers, a semiconductor film extending in the first direction through the conductive layers, an insulating film around the semiconductor film between the semiconductor film and the plurality of conductive layers. During a program operation performed on a first memory cell, a program voltage is applied to the first conductive layer while a first voltage is applied to the second conductive layers and a second voltage different from the first voltage is applied to the third conductive layers. The second conductive layers are each connected to gates of second memory cells programmed to store m bits, and the third conductive layers are each connected to gates of third memory cells programmed to store n bits, where n is different from m.

說(shuō)明書

For example, when the selected memory cell of the selected memory string MS0 performs programming on the memory cell MT4, in the region DR1, the channel semiconductor film 7 of the non-selected memory strings MS1, MS2, and MS3 is boosted as a result of the program pass voltage VPASS1 and the program pass voltage VPASS2 higher than the program pass voltage VPASS1 being applied to memory cells of these non-selected memory strings during the period from the timings t4 to t5 (see FIG. 8). Thus, the channel semiconductor film 7 may be boosted to a higher voltage (i.e., a voltage closer to the program voltage VPGM) than when uniformly boosted to the program pass voltage VPASS1. Therefore, the electric field stress applied to the memory cells MT4 of the non-selected memory strings MS1, MS2, and MS3 may be alleviated during the period from the timings t5 to t6 (see FIG. 8). As a result, the program disturb resistance may be improved as indicated by the dotted circles in FIGS. 6 and 7.

權(quán)利要求

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