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Display apparatus including connecting electrode layer

專利號
US12082461B2
公開日期
2024-09-03
申請人
Samsung Display Co., Ltd.（KR Yongin-si）
發(fā)明人
Seunghwan Cho; Jiryun Park; Seokje Seong; Inhyuck Yeo; Wonsuk Choi; Yoonsun Choi
IPC分類
H01L27/14; G09G3/3283; H10K59/121; H10K59/131; H01L27/12; H01L29/786
技術領域
wiring,line,connection,layer,may,gate,electrode,first,dv3,dv1
地域： Yongin-si

摘要

A display apparatus includes a first semiconductor layer disposed on a substrate; a first gate layer disposed on the first semiconductor layer, the first gate layer including a driving gate electrode; a second gate layer disposed on the first gate layer, the second gate layer including a capacitor upper electrode; a first connecting electrode layer disposed on the second gate layer, the first connecting electrode layer including a transfer wiring; a second connecting electrode layer disposed on the first connecting electrode layer, the second connecting electrode layer including a horizontal connection wiring extending in a first direction; and a third connecting electrode layer disposed on the second connecting electrode layer, the third connecting electrode layer including a vertical connection wiring extending in a second direction that intersects the first direction.

說明書

A compensation gate electrode of the compensation transistor T3 is electrically connected to the second scan line SL2. One of a source region and a drain region of the compensation transistor T3 may be electrically connected to the first electrode of the organic light-emitting diode OLED after passing through the emission control transistor T6 via the third node N3. The other of the source region and the drain region of the compensation transistor T3 may be electrically connected to a first capacitor electrode CE1 of the storage capacitor Cst and the driving gate electrode of the driving transistor T1 via the second node N2. The compensation transistor T3 may be turned on according to the second scan signal Sn′ transferred via the second scan line SL2 for diode-connecting the driving transistor T1.

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