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Display apparatus including connecting electrode layer

專利號(hào)
US12082461B2
公開(kāi)日期
2024-09-03
申請(qǐng)人
Samsung Display Co., Ltd.（KR Yongin-si）
發(fā)明人
Seunghwan Cho; Jiryun Park; Seokje Seong; Inhyuck Yeo; Wonsuk Choi; Yoonsun Choi
IPC分類
H01L27/14; G09G3/3283; H10K59/121; H10K59/131; H01L27/12; H01L29/786
技術(shù)領(lǐng)域
wiring,line,connection,layer,may,gate,electrode,first,dv3,dv1
地域： Yongin-si

摘要

A display apparatus includes a first semiconductor layer disposed on a substrate; a first gate layer disposed on the first semiconductor layer, the first gate layer including a driving gate electrode; a second gate layer disposed on the first gate layer, the second gate layer including a capacitor upper electrode; a first connecting electrode layer disposed on the second gate layer, the first connecting electrode layer including a transfer wiring; a second connecting electrode layer disposed on the first connecting electrode layer, the second connecting electrode layer including a horizontal connection wiring extending in a first direction; and a third connecting electrode layer disposed on the second connecting electrode layer, the third connecting electrode layer including a vertical connection wiring extending in a second direction that intersects the first direction.

說(shuō)明書(shū)

A first initialization voltage wiring 1340 corresponding to the first initialization voltage line VL1 of FIG. 6 may extend in the first direction (or x-axis direction). When seen in the direction perpendicular to the substrate 100 (or z-axis direction), the first initialization voltage wiring 1340 may be spaced apart from the third gate wiring 1310. The first initialization voltage Vint1 may be applied to the pixels via the first initialization voltage wiring 1340. The first initialization voltage wiring 1340 may at least partially overlap the second semiconductor layer 1400 that will be described below, and may be configured to transfer the first initialization voltage Vint1 to the second semiconductor layer 1400. The first initialization voltage wiring 1340 may be electrically connected to the second semiconductor layer 1400 via contact holes 1680CNT1, 1680CNT2, and 1680CNT3 that will be described below with reference to FIG. 13.

The second gate layer 1300 may include metal, an alloy, conductive metal oxide, a transparent conductive material, etc. For example, the second gate layer 1300 may include argentum (Ag), an alloy including argentum, molybdenum (Mo), an alloy including molybdenum, aluminum (Al), an alloy including aluminum, aluminum nitride (AlN), tungsten (W), tungsten nitride (WN), copper (Cu), nickel (Ni), chromium (Cr), chromium nitride (CrN), titanium (Ti), tantalum (Ta), platinum (Pt), scandium (Sc), indium tin oxide (ITO), indium zinc oxide (IZO), etc. The second gate layer 1300 may have a multi-layered structure, e.g., the second gate layer 1300 may include a double-layered structure including Mo/Al or a triple-layered structure including Mo/Al/Mo.

權(quán)利要求

1
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